Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

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Article Title

Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

Publication

Proceedings of 9 th International Conference on Leading Edge Manufacturing in 21st century LEM21, Hiroshima, 13-17.11.2017

Publication Title

Proceedings of 9 th International Conference on Leading Edge Manufacturing in 21st century LEM21, Hiroshima, 13-17.11.2017

ISSN

2424-3086

Year

2017

Conference Date

11/13-17/2017

Authors

Matsunaga, K.

Data Format

PDF

Abstract

The authors suggest a low fluence laser processing method for a power semiconductor wafer using a
femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface
reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse
processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and
then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser
induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission
electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at
the ablated area.

Keywords

Laser processing, Femtosecond laser, Ablation, Photo-excitation, SiC

Subject Fields

Mechanics

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